A collaboration between the groups of Professor Mónica H. Pérez-Temprano at the Institute of Chemical Research of Catalonia (ICIQ) and Professor Anat Milo at Ben-Gurion University of the Negev has ...
Welcome to Tech In Depth, our daily newsletter about the business of tech from Bloomberg’s journalists around the world. Today, Ed Ludlow and Ian King report on the skepticism that has greeted startup ...
Substrate, a small San Francisco startup is making waves in the global semiconductor industry, a business widely believed too complex to break into. With its proprietary technology, Substrate emerges ...
(a) Schematic illustration of the proposed signal modulation process. Left: initial input laser spot illustration before interacting with the SLM and Si metasurface. Middle: schematic of the linear ...
China's glass substrate through glass via (TGV) industry has made significant progress, with companies pushing innovations from materials to mass production. Despite challenges in yield and process ...
A new artificial intelligence-powered tool can help researchers determine how well an enzyme fits with a desired target, helping them find the best enzyme and substrate combination for applications ...
Abstract: Graphene has emerged as a promising material for future radio frequency (RF) device applications due to its exceptional carrier mobility, high saturation velocity, and atomically thin ...
Sketch of polarization entanglement from an InGaP metasurface. The nanostructured InGaP metasurface enables enhanced generation of polarization-entangled photon pairs counterpropagating along the z ...
Experiments show that carbon nanotubes transfer heat inefficiently at small scales, raising concerns for cooling and performance in nanoelectronic devices. (Nanowerk Spotlight) Thermal energy in solid ...
The SiC-on-insulator (SiCOI) is a next-generation semiconductor material structure that places a thin layer of silicon carbide (SiC) over an insulating layer, typically silicon dioxide. This design ...
Abstract: The total ionizing dose (TID) response of International Business Machines (IBM) gate-all-around (GAA) stacked nanosheet transistors was investigated. Both bulk and substrate-isolated nFET ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback