P Chidambaram has opposed the use of Hindi in the name of the Centre's new Bills Senior Congress leader and Rajya Sabha MP P Chidambaram has opposed the use of Hindi words in the title of Bills ...

Vertical GaN power devices could benefit from better p-type contacts, realised by magnesium implantation and ultra-high-pressure annealing Engineers from North Carolina State University, Adroit ...

Si LSI manufacturing technology is essential as the foundation of modern society. However, there was no wafer-scale technology for rapid, non-destructive, and non-contact evaluation of the internal ...

The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...

Department of Electrical and Electronic Engineering, University of Melbourne, Melbourne, Victoria 3010, Australia ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of ...

Amongst the ultrawide-bandgap semiconductor materials, the beta phase of gallium oxide is perhaps the most promising. The 3 × 3-mm device cathode was bonded onto a 0.5-mm-thick ...

An illustration of a magnifying glass. An illustration of a magnifying glass.

1 Department of Physics, College of Science, Qassim University, Buraidah, Saudi Arabia. 2 Laboratoire de Microélectronique et Instrumentation (UR 03/13-04), Faculté des Sciences de Monastir, Monastir, ...

Understanding the operating principles of a Gunn diode. Waveguide techniques for Gunn oscillator design. Key starting parameters for dual-tuned microwave Gunn oscillators. Despite being an older, ...

The feature size of silicon-based transistors is approaching the theoretical limit, which puts forward higher requirements for the “atomic level manufacturing” of semiconductors. The basic idea of ...