onsemi’s 1700-V EliteSiC MOSFETs and EliteSiC Schottky diodes provide reliable, efficient operation for energy infrastructure and industrial drive applications. The 1700-V NTH4L028N170M1 MOSFET brings ...
Santa Clara, CA and Kyoto, Japan, Feb. 15, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new 100V breakdown Schottky Barrier Diodes (SBDs) that deliver industry-leading[1] reverse ...
In the field of power electronics, the compound semiconductors gallium nitride and silicon carbide are dominating the market. Due to its beneficial properties, gallium arsenide is gaining more and ...
As they took him away, Clyde realized that leaving out that protection FET to save $0.35 had been a poor design decision. (Courtesy of Autoevolution) Electronics and automobiles have a long history ...
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