Traditional planar NAND flash has had a long and illustrious run, but its time is over. Multiple manufacturers have announced they have no plans to pursue 2D NAND below the 15nm process node. Share on ...
3D NAND flash memory is built by vertically stacking multiple alternating layers (tiers) of silicon nitride (SiN) and oxide (TEOS) on top of each other. A major challenge in producing multilayered 3D ...
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SanDisk's new High Bandwidth Flash memory enables 4TB of VRAM on GPUs, matches HBM bandwidth at higher capacity
SanDisk on Wednesday introduced an interesting new memory that could wed the capacity of 3D NAND and the extreme bandwidth enabled by high bandwidth memory (HBM). SanDisk's high-bandwidth flash (HBF) ...
NAND Flash is a type of non-volatile memory technology that has revolutionized data storage in the digital age. It is a form of flash memory, which means it can be electrically erased and reprogrammed ...
NAND flash technology is on a roll with advancements in cell structure and the subsequent boost in storage density. That allows this non-volatile-memory (NVM) chip to deliver faster throughput and ...
Each generation of 3D NAND packs about 30% more bits than the previous version, with current devices storing up to 2 terabits of data in a die the size of a fingernail. With new product introductions ...
On Tuesday, Samsung Electronics Co (OTC:SSNLF) announced that it has started mass production of the world’s most advanced 286-layer NAND flash memory chips, which offer increased data storage capacity ...
Samsung has announced the mass production of the first 3D NAND chips -- and with them, the beginning of a manufacturing initiative that will push solid-state cost-per-GB ever closer to magnetic ...
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Chinese chipmaker ships record-breaking chips: YMTC quietly begins shipping 5th Gen 3D TLC NAND
Yangtze Memory Technologies Co. (YMTC) has quietly started to ship its 5th-Gen 3D NAND memory with 294 layers in total as well as 232 active layers, and analysts from TechInsights have managed to ...
In brief: Japanese memory manufacturer Kioxia has announced it will unveil a trio of pioneering memory technologies at the IEEE International Electron Devices Meeting in San Francisco this December.
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