EDN

Under the Hood: New DRAM chip gets due notice

Over the years, there have not been many drastic changes to the structure of DRAM devices. There have been a few tweaks here and there to account for smaller process geometries and to optimize design, ...
EDN

IBM shows faster approach to embedded DRAM

TAIPEI, Taiwan — IBM Corp. is set to release an embedded DRAM design on Monday (June 10) with cycle times that approach those of SRAM, the current memory of choice for chip-scale systems. The ...
sciencex

Imec Demonstrates Capacitor-less IGZO-Based DRAM Cell With >400s Retention Time

This week, at the 2020 International Electron Devices Meeting, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, presents a novel dynamic random-access ...
Electronic Design

Solving DRAM’s Row Hammer Problem Using Vertical Epitaxial Transistors

What is DRAM’s row hammer problem and why is it important? How vertical epitaxial transistors solve the problem. How Spin Memory’s Universal Selector works. How the Universal Selector can improve DRAM ...