TOKYO — Toshiba Corp. has developed a one-transistor, no-capacitor cell structure that it claims solves the difficulties encountered in producing DRAMs in sub-0.1-micron process technology. The ...
On June 4, 1968, Robert Dennard was granted a patent for a single transistor, single capacitor DRAM cell design idea. This doesn’t sound earth-shattering today, but back in the sixties, this was a ...
This week, at the 2020 International Electron Devices Meeting, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, presents a novel dynamic random-access ...
One-transistor, one-capacitor (1T-1C) DRAM cells have been commercially implemented since at least 1999. They save die area compared to conventional 6-T DRAM cells, use less power, yield better, and ...
DRAM makers are pushing into the next phase of scaling, but they are facing several challenges as the memory technology approaches its physical limit. DRAM is used for main memory in systems, and ...
Since its introduction, DRAM technology has been a commodity product driven by cost and razor-thin profits. DRAM's achievement over the years is extraordinary; its capacity in 1970 was 1 Kb and today ...
eSpeaks’ Corey Noles talks with Rob Israch, President of Tipalti, about what it means to lead with Global-First Finance and how companies can build scalable, compliant operations in an increasingly ...
Flash memory has made incredible capacity strides thanks to monolithic 3D processing enabled by the stacking of more than 200 layers, which is on its way to 1.000 layers in future generations.[1] But ...
imec, the research and innovation hub in nanoelectronics, has presented a dynamic random-access memory (DRAM) cell architecture that implements two indium-gallium-zinc-oxide thin-film transistors ...
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