Semiconductor Engineering

A Comparative Evaluation Of DRAM Bit-Line Spacer Integration Schemes

With decreasing dynamic random-access memory (DRAM) cell sizes, DRAM process development has become increasingly difficult. Bit-line (BL) sensing margins and refresh times have become problematic as ...
Ars Technica

There’s a new way to flip bits in DRAM, and it works against the latest defenses

In 2015, researchers reported a surprising discovery that stoked industry-wide security concerns—an attack called RowHammer that could corrupt, modify, or steal sensitive data when a simple user-level ...
Semiconductor Engineering

Baby Steps Toward 3D DRAM

Flash memory has made incredible capacity strides thanks to monolithic 3D processing enabled by the stacking of more than 200 layers, which is on its way to 1.000 layers in future generations.[1] But ...